e l ek tr on isch e b a u e lemen te SMG111K 640ma, 55 v ,r ds(on) 2 n-channel enhancement mode power mos.fet [ description features marking : 111e the SMG111K utilized advanced processing techniques to achieve the lowest possible on- resistance, extremely efficient and cost-effectiveness device. the SMG111K is universally used for all commercial-industrial applications. total power dissipation linear derating factor operating junction and storage temperature range absolute maximum ratings drain-source voltage g ate-source voltage continuous drain current, v gs @10v @10v ma ma ma 55 20 640 500 950 1.38 3 1,2 continuous drain current, v gs pulsed drain current parameter symbo l ratings unit thermal data parameter symbo l ratings unit thermal resistance junction-ambient 3 v v i d @t a =7 0 /w c w / c c w v ds v gs i d @t a =25 i dm p d @t a =25 tj, tstg rthj-a 0.01 -55~+150 90 3 o o o c o c o c o max. dim min max a 2.70 3.10 b 1. 4 0 1. 6 0 c 1.00 1.30 d 0.35 0.50 g 1.70 2. 1 0 h 0.00 0.10 j 0.10 0.26 k 0. 2 0 0. 6 0 l 0.85 1. 1 5 s 2. 40 2.8 0 all dimension in mm sc-59 http://www.secosgmbh.com/ any changing of specification will not be informed individual s g d b l a 1 3 2 top view h c j k gate source drain 01 -jun-2002 rev. a page 1 of 4 * r o h s c o m p l i a n t * s i m p l e d r i v e r e q u i r e m e n t * s m a l l p a c k a g e o u t l i n e d g s
e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) t o t a l g a t e c h a r g e r d s ( o n ) p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e b r e a k d o w n v o l t a g e t e m p . c o e f f i c i e n t g a t e t h res h o l d vo l t a g e g a t e - s o u r c e l e a k a g e c u r r e n t d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 7 0 ) g a t e - s o u r c e c h a r g e g a t e - d r a i n ( " m i l l e r " ) c h a r g e t u r n - o n d e l a y t i m e r i s e t i m e t u r n - o f f d e l a y t i m e f a l l t i m e i n p u t c a p a c i t a n c e o u t p u t c a p a c i t a n c e r e v e r s e t r a n s f e r c a p a c i t a n c e b v d s s b v d s / t j v g s ( t h ) i g s s i d s s c r s s q g q g s q g d t d ( o n ) t d ( o f f ) t r c i s s c o s s t f v v / v n a u a u a n c n s p f [ v g s = 0 v , i d = 2 5 0 u a v d s = v g s , i d = 2 5 0 u a r e f e r e n c e t o 2 5 , i d = 1 m a _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ f o r w a r d t r a n s c o n d u c t a n c e g f s m s _ _ _ 5 0 _ _ _ _ c o c o c o 2 2 55 0 . 0 6 0 . 5 2 . 0 5 5 4 0 1 0 1 1 0 0 2 4 1 0 . 5 0 . 5 1 2 1 0 5 6 2 9 3 2 8 6 6 0 0 c o 1 . 6 v g s = 0 v v d s = 2 5 v f = 1 . 0 m h z v d d = 3 0 v i d = 6 0 0 m a v g s = 1 0 v r g = 3 . 3 r d = 5 2 [ [ i d = 6 0 0 m a v d s = 5 0 v v g s = 4 . 5 v v g s = 1 0 v , i d = 5 0 0 m a v g s = 4 . 5 v , i d = 5 00ma v g s = 2 0 v v d s = v , v g s = 0 v d s = v , v g s = 0 v d s = 1 0 v , i d = 6 0 0 m a o e l e k t r o n i s c h e b a u e l e m e n t e 0 1 - j u n - 2 0 0 2 r e v . a p a g e 2 o f 4 h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l s o u r c e - d r a i n d i o d e p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t f o r w a r d o n v o l t a g e v d s _ _ i s = 2 0 0 m a , v g s = 0 v . v 1 . 2 n o t e s : 1 . p u l s e w i d t h l i m i t e d b y m a x . j u n c t i o n t e m p e r a t u r e . 2 . p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . ?? ?? 2 3 . s u r f a c e m o u n t e d o n 1 i n c h 2 c o p p e r p a d o f f r 4 b o a r d ; 2 7 0 w h e n m o u n t e d o n m i n . c o p p e r p a d . c / w smg 111k 6 40m a, 5 5 v ,r ds(on) 2 n-channel enhancement mode power mos.fet [
e l ek tr on isch e b a u e lemen te smg 111k 6 40m a, 5 5 v ,r ds(on) 2 n-channel enhancement mode power mos.fet [ http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 3 of 4 c h a r a c t e r i s t i c s c u r v e f i g 5. f or w a r d c h ar a c t e r i s t i c s of r e ve r s e d i od e f i g 1 . t y p i c a l o u t p u t c h a r a c t e r i s t i c s f i g 4 . n o r m a l i z e d o n - r e s i s t a n c e v . s . j u n c t i o n t e m p e r a t u r e f i g 6. g a t e t h r e s h o l d v o l t age v . s . ju n c t i on t e m p e r at u r e f i g 2. t yp i c al o u t p u t c h ar ac t e r i s t i c s f i g 3. o n - r e s i s t an c e v . s . g a t e v ol t age
elektronische bauelemente SMG111K 640ma, 55v,r ds(on) 2 n-channel enhancement mode power mos.fet [ http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 4 of 4 f i g 9. m ax i m u m s af e o p e r at i n g a r e a f i g 10. e f f e c t i ve t r an s i e n t t h e r m a l i m p e d an c e f i g 7. g a t e c h ar ge c h ar ac t e r i s t i c s f i g 8. t yp i c al c ap ac i t an c e c h ar ac t e r i s t i c s f i g 1 1. t r an s f e r c h a r ac t e r i s t i c s f i g 12. g a t e c h ar ge w ave f o r m
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